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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5339 DESCRIPTION With TO-3P(H)IS package High voltage ,high speed Low saturation voltage Bult-in damper diode APPLICATIONS Horizontal deflection output for medium resolution display,color TV High speed switching applications PINNING PIN 1 2 3 Base Collector DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH Emitter CONDITIONS VALUE 1500 600 5 7 14 3.5 TC=25ae 50 150 -55~150 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature Open collector Fig.1 simplified outline (TO-3P(H)IS) and symbol UNIT V V V A A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5339 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance Diode forward voltage Transition frequency CONDITIONS IE=400mA ;IC=0 IC=5A; IB=1.25A IC=5A; IB=1.25A VCB=1500V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=5A ; VCE=5V IE=0 ; VCB=10V,f=1MHz 71 10 4 82 MIN 5 5 1.3 1 250 30 8 pF V MHz TYP. MAX UNIT V V V mA mA SYMBOL V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob VF fT Switching times ts tf TOR NDU ICO E SEM ANG INCH IF=5A 1.35 2.4 IE=0.1A ; VCE=10V Storage time 4 Fall time ICP=5A;IB1(end) =1.1A fH=31.5kHz 0.2 1.8 6 |I |I s s 0.5 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5339 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions (unindicated tolerance:A 0.20 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5339 TOR NDU ICO E SEM ANG INCH 4 |
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